MMBTH81_F080
For Reference Only
| Part Number | MMBTH81_F080 |
| PNEDA Part # | MMBTH81_F080 |
| Description | RF TRANS PNP 20V 600MHZ SOT23 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,262 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MMBTH81_F080 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MMBTH81_F080 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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MMBTH81_F080 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Frequency - Transition | 600MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
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Manufacturer Maxim Integrated Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1GHz Noise Figure (dB Typ @ f) 3.3dB @ 836MHz Gain 11.6dB Power - Max 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA, 3V Current - Collector (Ic) (Max) 1.2A Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package 8-SOIC-EP |
Manufacturer M/A-Com Technology Solutions Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 33V Frequency - Transition - Noise Figure (dB Typ @ f) - Gain 9dB Power - Max 80W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 5V Current - Collector (Ic) (Max) 9A Operating Temperature - Mounting Type Chassis Mount Package / Case 316-01 Supplier Device Package 316-01, STYLE 1 |
