MMUN2112LT1G
For Reference Only
| Part Number | MMUN2112LT1G |
| PNEDA Part # | MMUN2112LT1G |
| Description | TRANS PREBIAS PNP 246MW SOT23-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 87,450 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MMUN2112LT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MMUN2112LT1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
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MMUN2112LT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 246mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package USM |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 80mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition - Power - Max 100mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
Manufacturer Panasonic Electronic Components Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 150mW Mounting Type Surface Mount Package / Case SC-85 Supplier Device Package SMini3-F2-B |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
