Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MMUN2232LT1G

MMUN2232LT1G

For Reference Only

Part Number MMUN2232LT1G
PNEDA Part # MMUN2232LT1G
Description TRANS PREBIAS NPN 246MW SOT23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 951,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MMUN2232LT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMMUN2232LT1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
MMUN2232LT1G, MMUN2232LT1G Datasheet (Total Pages: 13, Size: 388.87 KB)
PDFNSBC143EF3T5G Datasheet Cover
NSBC143EF3T5G Datasheet Page 2 NSBC143EF3T5G Datasheet Page 3 NSBC143EF3T5G Datasheet Page 4 NSBC143EF3T5G Datasheet Page 5 NSBC143EF3T5G Datasheet Page 6 NSBC143EF3T5G Datasheet Page 7 NSBC143EF3T5G Datasheet Page 8 NSBC143EF3T5G Datasheet Page 9 NSBC143EF3T5G Datasheet Page 10 NSBC143EF3T5G Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MMUN2232LT1G Datasheet
  • where to find MMUN2232LT1G
  • ON Semiconductor

  • ON Semiconductor MMUN2232LT1G
  • MMUN2232LT1G PDF Datasheet
  • MMUN2232LT1G Stock

  • MMUN2232LT1G Pinout
  • Datasheet MMUN2232LT1G
  • MMUN2232LT1G Supplier

  • ON Semiconductor Distributor
  • MMUN2232LT1G Price
  • MMUN2232LT1G Distributor

MMUN2232LT1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

The Products You May Be Interested In

PDTC123TM,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 20mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

DFN1006-3

DDTC123JKA-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SC-59-3

DDTC114TE-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 100µA, 1mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

SOT-523

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

PDTC124EU,135

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA

Frequency - Transition

230MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70

Recently Sold

MT41K256M16TW-093:P

MT41K256M16TW-093:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

LTM4608AMPY#PBF

LTM4608AMPY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5V 8A

2N7002-7-F

2N7002-7-F

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

MAX3224EEAP+T

MAX3224EEAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

MAX3491EESD+

MAX3491EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

MAX3232ESE+

MAX3232ESE+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

HCPL-5631

HCPL-5631

Broadcom

OPTOISO 1.5KV 2CH OPEN COLL 8DIP

IS42S16160J-6BLI

IS42S16160J-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

SI4214DDY-T1-GE3

SI4214DDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

FDS9431A

FDS9431A

ON Semiconductor

MOSFET P-CH 20V 3.5A 8SOIC

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN