MPS5179_D26Z
For Reference Only
| Part Number | MPS5179_D26Z |
| PNEDA Part # | MPS5179_D26Z |
| Description | RF TRANS NPN 12V 2GHZ TO92-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,510 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MPS5179_D26Z Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MPS5179_D26Z |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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MPS5179_D26Z Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | 5dB @ 200MHz |
| Gain | 15dB |
| Power - Max | 350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 2.8V Frequency - Transition 45GHz Noise Figure (dB Typ @ f) 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz Gain - Power - Max 220mW DC Current Gain (hFE) (Min) @ Ic, Vce 155 @ 10mA, 2V Current - Collector (Ic) (Max) 70mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-343F Supplier Device Package 4-DFP |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5.3V Frequency - Transition 12.5GHz Noise Figure (dB Typ @ f) 1.45dB @ 1GHz Gain 11.8dB Power - Max 800mW DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 3.7V Frequency - Transition 60GHz Noise Figure (dB Typ @ f) 0.65dB @ 3.5GHz Gain 26dB Power - Max 120mW DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 15mA, 2.5V Current - Collector (Ic) (Max) 40mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package SOT-343 |
Manufacturer Panasonic Electronic Components Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 6GHz Noise Figure (dB Typ @ f) 1.3dB ~ 2dB @ 800MHz Gain 11dB ~ 14dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 8V Current - Collector (Ic) (Max) 80mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SMini3-G1 |
