MRF559T
For Reference Only
| Part Number | MRF559T |
| PNEDA Part # | MRF559T |
| Description | RF TRANS NPN 16V 870MHZ |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,526 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRF559T Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MRF559T |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MRF559T Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| Frequency - Transition | 870MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 9.5dB |
| Power - Max | 2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer CEL Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1.4dB @ 1GHz Gain 12dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 7mA, 3V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer Broadcom Limited Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 5.5V Frequency - Transition - Noise Figure (dB Typ @ f) 1.1dB ~ 1.4dB @ 900MHz Gain 12.5dB ~ 14.5dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 2.7V Current - Collector (Ic) (Max) 32mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 8V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
