MRF5812R1
For Reference Only
| Part Number | MRF5812R1 |
| PNEDA Part # | MRF5812R1 |
| Description | RF TRANS NPN 15V 5GHZ 8SO |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,552 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRF5812R1 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MRF5812R1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MRF5812R1 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 200mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz Gain 13dB ~ 15.5dB Power - Max 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V Current - Collector (Ic) (Max) 200mA Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.7V Frequency - Transition 45GHz Noise Figure (dB Typ @ f) 0.4dB ~ 1dB @ 150MHz ~ 10GHz Gain 10.5dB ~ 28dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 13mA, 3V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, Flat Leads Supplier Device Package 4-TSFP |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 4.5GHz Noise Figure (dB Typ @ f) 1.7dB ~ 2.5dB @ 2GHz Gain - Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA, 1V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7.5GHz Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain 12.5dB ~ 19dB Power - Max 700mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 8V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
