MS1612
For Reference Only
| Part Number | MS1612 |
| PNEDA Part # | MS1612 |
| Description | RF POWER TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,176 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MS1612 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MS1612 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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Prompt Responsiveness
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MS1612 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.7V Frequency - Transition 47GHz Noise Figure (dB Typ @ f) 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain 9dB ~ 31dB Power - Max 160mW DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA, 3V Current - Collector (Ic) (Max) 45mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, Flat Leads Supplier Device Package 4-TSFP |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 42V Frequency - Transition 2.3GHz Noise Figure (dB Typ @ f) - Gain 8dB Power - Max 20.5W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 5V Current - Collector (Ic) (Max) 1A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55BT Supplier Device Package 55BT |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) 6.5dB @ 60MHz Gain 14dB @ 200MHz Power - Max 350W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92 |
