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MSC025SMA120B

MSC025SMA120B

For Reference Only

Part Number MSC025SMA120B
PNEDA Part # MSC025SMA120B
Description GEN2 SIC MOSFET 1200V 25MOHM TO-
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MSC025SMA120B Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberMSC025SMA120B
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MSC025SMA120B, MSC025SMA120B Datasheet (Total Pages: 12, Size: 3,798.21 KB)
PDFMSC025SMA120J Datasheet Cover
MSC025SMA120J Datasheet Page 2 MSC025SMA120J Datasheet Page 3 MSC025SMA120J Datasheet Page 4 MSC025SMA120J Datasheet Page 5 MSC025SMA120J Datasheet Page 6 MSC025SMA120J Datasheet Page 7 MSC025SMA120J Datasheet Page 8 MSC025SMA120J Datasheet Page 9 MSC025SMA120J Datasheet Page 10 MSC025SMA120J Datasheet Page 11

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MSC025SMA120B Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1.2kV
Current - Continuous Drain (Id) @ 25°C103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs232nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds3020pF @ 1000V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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