MT29F128G08CECBBH1-10IT:B TR
For Reference Only
| Part Number | MT29F128G08CECBBH1-10IT:B TR |
| PNEDA Part # | MT29F128G08CECBBH1-10IT-B-TR |
| Description | IC FLASH 128G PARALLEL 100MHZ |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 8,658 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT29F128G08CECBBH1-10IT:B TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT29F128G08CECBBH1-10IT:B TR |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MT29F128G08CECBBH1-10IT:B TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 128Gb (16G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 100MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-VBGA |
| Supplier Device Package | 100-VBGA (12x18) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP II |
