MT29F128G08CEHGBJ4-3R:G TR
For Reference Only
| Part Number | MT29F128G08CEHGBJ4-3R:G TR |
| PNEDA Part # | MT29F128G08CEHGBJ4-3R-G-TR |
| Description | IC FLASH 128G PARALLEL 132VBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 8,586 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT29F128G08CEHGBJ4-3R:G TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT29F128G08CEHGBJ4-3R:G TR |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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MT29F128G08CEHGBJ4-3R:G TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 128Gb (16G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.5V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | - |
| Supplier Device Package | 132-VBGA (12x18) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 2.4V ~ 2.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 208-LFBGA Supplier Device Package 208-CABGA (15x15) |
