MT3S20P(TE12L,F)
For Reference Only
| Part Number | MT3S20P(TE12L,F) |
| PNEDA Part # | MT3S20P-TE12L-F |
| Description | RF TRANS NPN 12V 7GHZ PW-MINI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,376 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
MT3S20P(TE12L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | MT3S20P(TE12L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- MT3S20P(TE12L,F) Datasheet
- where to find MT3S20P(TE12L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage MT3S20P(TE12L,F)
- MT3S20P(TE12L,F) PDF Datasheet
- MT3S20P(TE12L,F) Stock
- MT3S20P(TE12L,F) Pinout
- Datasheet MT3S20P(TE12L,F)
- MT3S20P(TE12L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- MT3S20P(TE12L,F) Price
- MT3S20P(TE12L,F) Distributor
MT3S20P(TE12L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Gain | 16.5dB |
| Power - Max | 1.8W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | PW-MINI |
The Products You May Be Interested In
|
Manufacturer Broadcom Limited Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 5.5V Frequency - Transition - Noise Figure (dB Typ @ f) 1.1dB ~ 1.4dB @ 900MHz Gain 12.5dB ~ 14.5dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 2.7V Current - Collector (Ic) (Max) 32mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 4.5GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 9dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 7mA, 3V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5.5GHz Noise Figure (dB Typ @ f) 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain 7dB Power - Max 2W DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 10V Current - Collector (Ic) (Max) 250mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 10dB Power - Max 7.5W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 5V Current - Collector (Ic) (Max) 1A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M115 Supplier Device Package M115 |
Manufacturer CEL Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1.9dB @ 2GHz Gain 7.5dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 3V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
