MT46H128M16LFB7-5 WT:B TR
For Reference Only
| Part Number | MT46H128M16LFB7-5 WT:B TR |
| PNEDA Part # | MT46H128M16LFB7-5-WT-B-TR |
| Description | IC DRAM 2G PARALLEL 60VFBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 6,282 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT46H128M16LFB7-5 WT:B TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT46H128M16LFB7-5 WT:B TR |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MT46H128M16LFB7-5 WT:B TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.0ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-VFBGA |
| Supplier Device Package | 60-VFBGA (10x10) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR Memory Size 256Mb (16M x 16) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page 15ns Access Time 700ps Voltage - Supply 2.5V ~ 2.7V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 60-FBGA Supplier Device Package 60-FBGA (8x14) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mb (128K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 15ns Access Time 15ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 32-BSOJ (0.300", 7.62mm Width) Supplier Device Package 32-SOJ |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 512Gb (64G x 8) Memory Interface Parallel Clock Frequency 167MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Cypress Semiconductor Corp Series GL-P Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (32M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 100ns Access Time 100ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package 56-TSOP |
Manufacturer Fujitsu Electronics America, Inc. Series - Memory Type Non-Volatile Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 150ns Access Time 150ns Voltage - Supply 1.8V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP |
