MT47H128M8SH-25E IT:M TR
For Reference Only
| Part Number | MT47H128M8SH-25E IT:M TR |
| PNEDA Part # | MT47H128M8SH-25E-IT-M-TR |
| Description | IC SDRAM DDR2 1G 60FBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 3,330 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT47H128M8SH-25E IT:M TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT47H128M8SH-25E IT:M TR |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
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Notes
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MT47H128M8SH-25E IT:M TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 400MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
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Manufacturer Toshiba Memory America, Inc. Series Benand™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gb (512M x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 67-VFBGA Supplier Device Package 67-VFBGA (6.5x8) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology DRAM Memory Size 576Mb (32M x 18) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page - Access Time 20ns Voltage - Supply 1.7V ~ 1.9V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 144-TFBGA Supplier Device Package 144-FCBGA (11x18.5) |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EPROM Technology EPROM - OTP Memory Size 512Kb (64K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 70ns Voltage - Supply 2.7V ~ 3.6V, 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TC) Mounting Type Surface Mount Package / Case 28-SOIC (0.342", 8.69mm Width) Supplier Device Package 28-SOIC |
