Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MTB75N05HDT4

MTB75N05HDT4

For Reference Only

Part Number MTB75N05HDT4
PNEDA Part # MTB75N05HDT4
Description MOSFET N-CH 50V 75A D2PAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MTB75N05HDT4 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMTB75N05HDT4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MTB75N05HDT4, MTB75N05HDT4 Datasheet (Total Pages: 8, Size: 240.56 KB)
PDFMTB75N05HDT4 Datasheet Cover
MTB75N05HDT4 Datasheet Page 2 MTB75N05HDT4 Datasheet Page 3 MTB75N05HDT4 Datasheet Page 4 MTB75N05HDT4 Datasheet Page 5 MTB75N05HDT4 Datasheet Page 6 MTB75N05HDT4 Datasheet Page 7 MTB75N05HDT4 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MTB75N05HDT4 Datasheet
  • where to find MTB75N05HDT4
  • ON Semiconductor

  • ON Semiconductor MTB75N05HDT4
  • MTB75N05HDT4 PDF Datasheet
  • MTB75N05HDT4 Stock

  • MTB75N05HDT4 Pinout
  • Datasheet MTB75N05HDT4
  • MTB75N05HDT4 Supplier

  • ON Semiconductor Distributor
  • MTB75N05HDT4 Price
  • MTB75N05HDT4 Distributor

MTB75N05HDT4 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

DMN6066SSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

66mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

502pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

BSS138LT7G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.75V, 5V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 200mA, 5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

225mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

TSM210N02CX RFG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.56W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

IPP60R080P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 11.8A, 10V

Vgs(th) (Max) @ Id

4V @ 590µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2180pF @ 400V

FET Feature

-

Power Dissipation (Max)

129W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

AUIRF2903ZL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6320pF @ 25V

FET Feature

-

Power Dissipation (Max)

231W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

FP3-R47-R

FP3-R47-R

Eaton - Electronics Division

FIXED IND 470NH 10.9A 3.67 MOHM

B82422A1103K100

B82422A1103K100

TDK-EPCOS

FIXED IND 10UH 180MA 1.6 OHM SMD

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

PIC18F1230-I/SO

PIC18F1230-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

CMSH1-40 TR13

CMSH1-40 TR13

Central Semiconductor Corp

DIODE SCHOTTKY 40V 1A SMB

HCPL-0201-500E

HCPL-0201-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 8SO

MT41K256M16TW-093:P

MT41K256M16TW-093:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

MIC29302BU

MIC29302BU

Microchip Technology

IC REG LINEAR POS ADJ 3A TO263-5

IRFP150N

IRFP150N

Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

TC622VAT

TC622VAT

Microchip Technology

IC TEMP SNSR PROG 5V TO220-5

RB551V-30-TP

RB551V-30-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 500MA SOD323

AD9240AS

AD9240AS

Analog Devices

IC ADC 14BIT PIPELINED 44MQFP