Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MTM231100L

MTM231100L

For Reference Only

Part Number MTM231100L
PNEDA Part # MTM231100L
Description MOSFET P-CH 12V 4A SMINI-3
Manufacturer Panasonic Electronic Components
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MTM231100L Resources

Brand Panasonic Electronic Components
ECAD Module ECAD
Mfr. Part NumberMTM231100L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MTM231100L, MTM231100L Datasheet (Total Pages: 3, Size: 502.99 KB)
PDFMTM231100L Datasheet Cover
MTM231100L Datasheet Page 2 MTM231100L Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MTM231100L Datasheet
  • where to find MTM231100L
  • Panasonic Electronic Components

  • Panasonic Electronic Components MTM231100L
  • MTM231100L PDF Datasheet
  • MTM231100L Stock

  • MTM231100L Pinout
  • Datasheet MTM231100L
  • MTM231100L Supplier

  • Panasonic Electronic Components Distributor
  • MTM231100L Price
  • MTM231100L Distributor

MTM231100L Specifications

ManufacturerPanasonic Electronic Components
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Rds On (Max) @ Id, Vgs40mOhm @ 1A, 4V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSMini3-G1
Package / CaseSC-70, SOT-323

The Products You May Be Interested In

JANTX2N7224U

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/592

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

81mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-267AB

Package / Case

TO-267AB

STD25P03LT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

80mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1260pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NX138AKR

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

4.5Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 30V

FET Feature

-

Power Dissipation (Max)

325mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2327DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.35Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

DMP2010UFV-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

3350pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

Recently Sold

MAX3491EESD

MAX3491EESD

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

NTR4171PT1G

NTR4171PT1G

ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23

RCLAMP0524PATCT

RCLAMP0524PATCT

Semtech

TVS DIODE 5V 15V SLP2510P8

PB5006-E3/45

PB5006-E3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT 1P 600V 45A PB

LT1129IS8#PBF

LT1129IS8#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 700MA 8SOIC

ISL21010CFH325Z-TK

ISL21010CFH325Z-TK

Renesas Electronics America Inc.

IC VREF SERIES 2.5V SOT23-3

PEX8796-AB80BI G

PEX8796-AB80BI G

Broadcom

PCI INT IC MULT-RT GEN 3 SW

PBRC4.00HR50X000

PBRC4.00HR50X000

Kyocera

CER RES 4.0000MHZ 30PF SMD

UPD78F0455GB-GAH-AX

UPD78F0455GB-GAH-AX

Renesas Electronics America

IC MCU 8BIT 60KB FLASH 64TQFP

HSMS-285C-TR1G

HSMS-285C-TR1G

Broadcom

RF DIODE SCHOTTKY 2V SOT323

MMSS8050-H-TP

MMSS8050-H-TP

Micro Commercial Co

TRANS NPN 25V 1.5A SOT23

ADV7123SCP170EP-RL

ADV7123SCP170EP-RL

Analog Devices

IC DAC 10BIT A-OUT 48LQFP