MUH1PB-M3/89A
For Reference Only
| Part Number | MUH1PB-M3/89A |
| PNEDA Part # | MUH1PB-M3-89A |
| Description | DIODE GEN PURP 100V 1A MICROSMP |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MUH1PB-M3/89A Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MUH1PB-M3/89A |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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MUH1PB-M3/89A Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | eSMP® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.05V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 40ns |
| Current - Reverse Leakage @ Vr | 1µA @ 100V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | MicroSMP |
| Supplier Device Package | MicroSMP |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 5A (DC) Voltage - Forward (Vf) (Max) @ If 0.98V @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 150°C |
