MUN5216T1G
For Reference Only
| Part Number | MUN5216T1G |
| PNEDA Part # | MUN5216T1G |
| Description | TRANS PREBIAS NPN 202MW SC70-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 85,764 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MUN5216T1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MUN5216T1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MUN5216T1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 202mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SC-70-3 (SOT323) |
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Manufacturer Panasonic Electronic Components Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 150MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SMini3-G1 |
Manufacturer ON Semiconductor Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
