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MUN5311DW1T2G

MUN5311DW1T2G

For Reference Only

Part Number MUN5311DW1T2G
PNEDA Part # MUN5311DW1T2G
Description TRANS PREBIAS NPN/PNP SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 102,354
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5311DW1T2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5311DW1T2G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5311DW1T2G, MUN5311DW1T2G Datasheet (Total Pages: 13, Size: 250.35 KB)
PDFNSVBC114EPDXV6T1G Datasheet Cover
NSVBC114EPDXV6T1G Datasheet Page 2 NSVBC114EPDXV6T1G Datasheet Page 3 NSVBC114EPDXV6T1G Datasheet Page 4 NSVBC114EPDXV6T1G Datasheet Page 5 NSVBC114EPDXV6T1G Datasheet Page 6 NSVBC114EPDXV6T1G Datasheet Page 7 NSVBC114EPDXV6T1G Datasheet Page 8 NSVBC114EPDXV6T1G Datasheet Page 9 NSVBC114EPDXV6T1G Datasheet Page 10 NSVBC114EPDXV6T1G Datasheet Page 11

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MUN5311DW1T2G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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