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MUN5313DW1T1G

MUN5313DW1T1G

For Reference Only

Part Number MUN5313DW1T1G
PNEDA Part # MUN5313DW1T1G
Description TRANS PREBIAS NPN/PNP SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 99,756
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5313DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5313DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5313DW1T1G, MUN5313DW1T1G Datasheet (Total Pages: 10, Size: 100.93 KB)
PDFNSVB144EPDXV6T1G Datasheet Cover
NSVB144EPDXV6T1G Datasheet Page 2 NSVB144EPDXV6T1G Datasheet Page 3 NSVB144EPDXV6T1G Datasheet Page 4 NSVB144EPDXV6T1G Datasheet Page 5 NSVB144EPDXV6T1G Datasheet Page 6 NSVB144EPDXV6T1G Datasheet Page 7 NSVB144EPDXV6T1G Datasheet Page 8 NSVB144EPDXV6T1G Datasheet Page 9 NSVB144EPDXV6T1G Datasheet Page 10

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MUN5313DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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