MVB50P03HDLT4G
For Reference Only
| Part Number | MVB50P03HDLT4G |
| PNEDA Part # | MVB50P03HDLT4G |
| Description | INTEGRATED CIRCUIT |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,794 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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MVB50P03HDLT4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MVB50P03HDLT4G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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MVB50P03HDLT4G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 5V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 4.9nF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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