Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MVSF2N02ELT1G

MVSF2N02ELT1G

For Reference Only

Part Number MVSF2N02ELT1G
PNEDA Part # MVSF2N02ELT1G
Description MOSFET N-CH 20V 2.8A SOT23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MVSF2N02ELT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMVSF2N02ELT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MVSF2N02ELT1G, MVSF2N02ELT1G Datasheet (Total Pages: 5, Size: 118.15 KB)
PDFMVSF2N02ELT1G Datasheet Cover
MVSF2N02ELT1G Datasheet Page 2 MVSF2N02ELT1G Datasheet Page 3 MVSF2N02ELT1G Datasheet Page 4 MVSF2N02ELT1G Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MVSF2N02ELT1G Datasheet
  • where to find MVSF2N02ELT1G
  • ON Semiconductor

  • ON Semiconductor MVSF2N02ELT1G
  • MVSF2N02ELT1G PDF Datasheet
  • MVSF2N02ELT1G Stock

  • MVSF2N02ELT1G Pinout
  • Datasheet MVSF2N02ELT1G
  • MVSF2N02ELT1G Supplier

  • ON Semiconductor Distributor
  • MVSF2N02ELT1G Price
  • MVSF2N02ELT1G Distributor

MVSF2N02ELT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

FDD9511L-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 20V

FET Feature

-

Power Dissipation (Max)

48.4W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NVMFS5C406NLWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

53A (Ta), 362A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

700µOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 280µA

Gate Charge (Qg) (Max) @ Vgs

149nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 179W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

FQPF19N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 25V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

IXTP27N20T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NVMYS3D5N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK

Recently Sold

MAX881REUB+

MAX881REUB+

Maxim Integrated

IC REG CHARGE PUMP 1OUT 10UMAX

BCV62C,215

BCV62C,215

Nexperia

TRANS PNP 30V 100MA DUAL SOT143B

ADP7158ACPZ-3.3-R7

ADP7158ACPZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 2A 10LFCSP

LTC2802IDE#TRPBF

LTC2802IDE#TRPBF

Linear Technology/Analog Devices

IC TRANSCEIVER HALF 1/1 12DFN

MAX811MEUS+T

MAX811MEUS+T

Maxim Integrated

IC VOLT MON W/RESET SOT143-4

MT41K512M16HA-107:A

MT41K512M16HA-107:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

MMSS8050-H-TP

MMSS8050-H-TP

Micro Commercial Co

TRANS NPN 25V 1.5A SOT23

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

LPC4330FBD144,551

LPC4330FBD144,551

NXP

IC MCU 32BIT ROMLESS 144LQFP

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

VESD05A1B-02V-G-08

VESD05A1B-02V-G-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 11V SOD523

US6K1TR

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6