MX2N4860
For Reference Only
| Part Number | MX2N4860 |
| PNEDA Part # | MX2N4860 |
| Description | N CHANNEL JFET |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,408 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MX2N4860 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MX2N4860 |
| Category | Semiconductors › Transistors › Transistors - JFETs |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MX2N4860 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/385 |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 100mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 6V @ 500pA |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Resistance - RDS(On) | 40 Ohms |
| Power - Max | 360mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 (TO-206AA) |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 15mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds 16pF @ 20V Resistance - RDS(On) 50 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 8mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 10V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 360mW Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 300 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
