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N0413N-ZK-E1-AY

N0413N-ZK-E1-AY

For Reference Only

Part Number N0413N-ZK-E1-AY
PNEDA Part # N0413N-ZK-E1-AY
Description MOSFET N-CH 40V 100A TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

N0413N-ZK-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberN0413N-ZK-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
N0413N-ZK-E1-AY, N0413N-ZK-E1-AY Datasheet (Total Pages: 8, Size: 210.94 KB)
PDFN0413N-ZK-E1-AY Datasheet Cover
N0413N-ZK-E1-AY Datasheet Page 2 N0413N-ZK-E1-AY Datasheet Page 3 N0413N-ZK-E1-AY Datasheet Page 4 N0413N-ZK-E1-AY Datasheet Page 5 N0413N-ZK-E1-AY Datasheet Page 6 N0413N-ZK-E1-AY Datasheet Page 7 N0413N-ZK-E1-AY Datasheet Page 8

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N0413N-ZK-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5550pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 119W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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