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NCV5701BDR2G

NCV5701BDR2G

For Reference Only

Part Number NCV5701BDR2G
PNEDA Part # NCV5701BDR2G
Description HIGH CURRENT IGBT GATE DR
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NCV5701BDR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNCV5701BDR2G
CategorySemiconductorsPower Management ICsPMIC - Gate Drivers
Datasheet
NCV5701BDR2G, NCV5701BDR2G Datasheet (Total Pages: 20, Size: 330.44 KB)
PDFNCV5701CDR2G Datasheet Cover
NCV5701CDR2G Datasheet Page 2 NCV5701CDR2G Datasheet Page 3 NCV5701CDR2G Datasheet Page 4 NCV5701CDR2G Datasheet Page 5 NCV5701CDR2G Datasheet Page 6 NCV5701CDR2G Datasheet Page 7 NCV5701CDR2G Datasheet Page 8 NCV5701CDR2G Datasheet Page 9 NCV5701CDR2G Datasheet Page 10 NCV5701CDR2G Datasheet Page 11

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NCV5701BDR2G Specifications

ManufacturerON Semiconductor
Series-
Driven ConfigurationHigh-Side or Low-Side
Channel TypeSingle
Number of Drivers1
Gate TypeIGBT
Voltage - Supply20V
Logic Voltage - VIL, VIH0.75V, 4.3V
Current - Peak Output (Source, Sink)20mA, 15mA
Input TypeInverting
High Side Voltage - Max (Bootstrap)-
Rise / Fall Time (Typ)9.2ns, 7.9ns
Operating Temperature-40°C ~ 125°C (TA)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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