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NDD01N60-1G

NDD01N60-1G

For Reference Only

Part Number NDD01N60-1G
PNEDA Part # NDD01N60-1G
Description MOSFET N-CH 600V 1.5A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD01N60-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD01N60-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD01N60-1G, NDD01N60-1G Datasheet (Total Pages: 8, Size: 130.3 KB)
PDFNDT01N60T1G Datasheet Cover
NDT01N60T1G Datasheet Page 2 NDT01N60T1G Datasheet Page 3 NDT01N60T1G Datasheet Page 4 NDT01N60T1G Datasheet Page 5 NDT01N60T1G Datasheet Page 6 NDT01N60T1G Datasheet Page 7 NDT01N60T1G Datasheet Page 8

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NDD01N60-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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