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NDD03N80Z-1G

NDD03N80Z-1G

For Reference Only

Part Number NDD03N80Z-1G
PNEDA Part # NDD03N80Z-1G
Description MOSFET N-CH 800V 2.9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD03N80Z-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD03N80Z-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD03N80Z-1G, NDD03N80Z-1G Datasheet (Total Pages: 8, Size: 118.5 KB)
PDFNDD03N80ZT4G Datasheet Cover
NDD03N80ZT4G Datasheet Page 2 NDD03N80ZT4G Datasheet Page 3 NDD03N80ZT4G Datasheet Page 4 NDD03N80ZT4G Datasheet Page 5 NDD03N80ZT4G Datasheet Page 6 NDD03N80ZT4G Datasheet Page 7 NDD03N80ZT4G Datasheet Page 8

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NDD03N80Z-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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