Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDD03N80Z-1G

NDD03N80Z-1G

For Reference Only

Part Number NDD03N80Z-1G
PNEDA Part # NDD03N80Z-1G
Description MOSFET N-CH 800V 2.9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD03N80Z-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD03N80Z-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD03N80Z-1G, NDD03N80Z-1G Datasheet (Total Pages: 8, Size: 118.5 KB)
PDFNDD03N80ZT4G Datasheet Cover
NDD03N80ZT4G Datasheet Page 2 NDD03N80ZT4G Datasheet Page 3 NDD03N80ZT4G Datasheet Page 4 NDD03N80ZT4G Datasheet Page 5 NDD03N80ZT4G Datasheet Page 6 NDD03N80ZT4G Datasheet Page 7 NDD03N80ZT4G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDD03N80Z-1G Datasheet
  • where to find NDD03N80Z-1G
  • ON Semiconductor

  • ON Semiconductor NDD03N80Z-1G
  • NDD03N80Z-1G PDF Datasheet
  • NDD03N80Z-1G Stock

  • NDD03N80Z-1G Pinout
  • Datasheet NDD03N80Z-1G
  • NDD03N80Z-1G Supplier

  • ON Semiconductor Distributor
  • NDD03N80Z-1G Price
  • NDD03N80Z-1G Distributor

NDD03N80Z-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

FDD8444

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

145A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

116nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6195pF @ 25V

FET Feature

-

Power Dissipation (Max)

153W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDZ7296

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

18-BGA (2.5x4)

Package / Case

18-WFBGA

RJK03M5DNS-00#J5

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1890pF @ 10V

FET Feature

-

Power Dissipation (Max)

15W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HWSON (3.3x3.3)

Package / Case

8-PowerWDFN

RSF015N06TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

290mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 5V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT3

Package / Case

3-SMD, Flat Leads

GP1M016A025FG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

944pF @ 25V

FET Feature

-

Power Dissipation (Max)

30.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Recently Sold

M2GL005-TQ144I

M2GL005-TQ144I

Microsemi

IC FPGA 84 I/O 144TQFP

AT21CS01-STUM10-T

AT21CS01-STUM10-T

Microchip Technology

IC EEPROM 1K I2C 125KHZ SOT23

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

DSPIC33FJ256GP710-I/PF

DSPIC33FJ256GP710-I/PF

Microchip Technology

IC MCU 16BIT 256KB FLASH 100TQFP

PIC18F2455-I/SO

PIC18F2455-I/SO

Microchip Technology

IC MCU 8BIT 24KB FLASH 28SOIC

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

AT89S52-24AUR

AT89S52-24AUR

Microchip Technology

IC MCU 8BIT 8KB FLASH 44TQFP

BC846B

BC846B

ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP

MMSZ5233BT1G

MMSZ5233BT1G

ON Semiconductor

DIODE ZENER 6V 500MW SOD123

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC