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NDD05N50Z-1G

NDD05N50Z-1G

For Reference Only

Part Number NDD05N50Z-1G
PNEDA Part # NDD05N50Z-1G
Description MOSFET N-CH 500V 5A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD05N50Z-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD05N50Z-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD05N50Z-1G, NDD05N50Z-1G Datasheet (Total Pages: 10, Size: 143.49 KB)
PDFNDF05N50ZH Datasheet Cover
NDF05N50ZH Datasheet Page 2 NDF05N50ZH Datasheet Page 3 NDF05N50ZH Datasheet Page 4 NDF05N50ZH Datasheet Page 5 NDF05N50ZH Datasheet Page 6 NDF05N50ZH Datasheet Page 7 NDF05N50ZH Datasheet Page 8 NDF05N50ZH Datasheet Page 9 NDF05N50ZH Datasheet Page 10

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NDD05N50Z-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs18.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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