Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDD60N900U1T4G

NDD60N900U1T4G

For Reference Only

Part Number NDD60N900U1T4G
PNEDA Part # NDD60N900U1T4G
Description MOSFET N-CH 600V 5.9A DPAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,478
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD60N900U1T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD60N900U1T4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD60N900U1T4G, NDD60N900U1T4G Datasheet (Total Pages: 8, Size: 132.55 KB)
PDFNDD60N900U1T4G Datasheet Cover
NDD60N900U1T4G Datasheet Page 2 NDD60N900U1T4G Datasheet Page 3 NDD60N900U1T4G Datasheet Page 4 NDD60N900U1T4G Datasheet Page 5 NDD60N900U1T4G Datasheet Page 6 NDD60N900U1T4G Datasheet Page 7 NDD60N900U1T4G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDD60N900U1T4G Datasheet
  • where to find NDD60N900U1T4G
  • ON Semiconductor

  • ON Semiconductor NDD60N900U1T4G
  • NDD60N900U1T4G PDF Datasheet
  • NDD60N900U1T4G Stock

  • NDD60N900U1T4G Pinout
  • Datasheet NDD60N900U1T4G
  • NDD60N900U1T4G Supplier

  • ON Semiconductor Distributor
  • NDD60N900U1T4G Price
  • NDD60N900U1T4G Distributor

NDD60N900U1T4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 50V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

CMUDM8005 TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

650mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4.5V

Vgs (Max)

8V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

APT21M100J

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8500pF @ 25V

FET Feature

-

Power Dissipation (Max)

462W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

FDPF7N60NZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

IRLR8113TRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

94A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2920pF @ 15V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STP80N70F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

68V

Current - Continuous Drain (Id) @ 25°C

96A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 48A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5850pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO

MAX8556ETE+

MAX8556ETE+

Maxim Integrated

IC REG LINEAR POS ADJ 4A 16TQFN

CMSH1-40 TR13

CMSH1-40 TR13

Central Semiconductor Corp

DIODE SCHOTTKY 40V 1A SMB

ADM3490EARZ

ADM3490EARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

LTC4416IMS-1#PBF

LTC4416IMS-1#PBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 10MSOP

MBR4045PT

MBR4045PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V TO3P

CAT24C256WI-GT3

CAT24C256WI-GT3

ON Semiconductor

IC EEPROM 256K I2C 1MHZ 8SOIC

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

YC324-JK-071KL

YC324-JK-071KL

Yageo

RES ARRAY 4 RES 1K OHM 2012

BAV70

BAV70

Panasonic Electronic Components

DIODE ARRAY GP 80V 200MA SOT23-3

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP