Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDS355AN-F169

NDS355AN-F169

For Reference Only

Part Number NDS355AN-F169
PNEDA Part # NDS355AN-F169
Description MSOFET N-CH SMD
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDS355AN-F169 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDS355AN-F169
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDS355AN-F169, NDS355AN-F169 Datasheet (Total Pages: 7, Size: 464.66 KB)
PDFNDS355AN-NB9L007A Datasheet Cover
NDS355AN-NB9L007A Datasheet Page 2 NDS355AN-NB9L007A Datasheet Page 3 NDS355AN-NB9L007A Datasheet Page 4 NDS355AN-NB9L007A Datasheet Page 5 NDS355AN-NB9L007A Datasheet Page 6 NDS355AN-NB9L007A Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDS355AN-F169 Datasheet
  • where to find NDS355AN-F169
  • ON Semiconductor

  • ON Semiconductor NDS355AN-F169
  • NDS355AN-F169 PDF Datasheet
  • NDS355AN-F169 Stock

  • NDS355AN-F169 Pinout
  • Datasheet NDS355AN-F169
  • NDS355AN-F169 Supplier

  • ON Semiconductor Distributor
  • NDS355AN-F169 Price
  • NDS355AN-F169 Distributor

NDS355AN-F169 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds195pF @ 15V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

NTTFS5820NLTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.5mOhm @ 8.7A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1462pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

IRF7807D1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

NVD3055L104T4G-VF01

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SI4174DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

985pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMN2020LSN-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 9.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1149pF @ 10V

FET Feature

-

Power Dissipation (Max)

610mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

AC0603FR-07100KL

AC0603FR-07100KL

Yageo

RES SMD 100K OHM 1% 1/10W 0603

ACPL-M21L-500E

ACPL-M21L-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 5SO

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

ISL9205IRZ-T

ISL9205IRZ-T

Renesas Electronics America Inc.

IC CHRGR LI-ION SGL 4.2V 16-QFN

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

ADM1184ARMZ-REEL7

ADM1184ARMZ-REEL7

Analog Devices

IC VOLT MONITOR/SEQ 4CH 10MSOP

AT32UC3C1256C-AUT

AT32UC3C1256C-AUT

Microchip Technology

IC MCU 32BIT 256KB FLASH 100TQFP

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

ATMEGA32A-AU

ATMEGA32A-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 44TQFP

MAX1853EXT

MAX1853EXT

Maxim Integrated

IC REG CHARGE PUMP INV SC70-6

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB