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NDS8852H

NDS8852H

For Reference Only

Part Number NDS8852H
PNEDA Part # NDS8852H
Description MOSFET N/P-CH 30V 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDS8852H Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDS8852H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
NDS8852H, NDS8852H Datasheet (Total Pages: 12, Size: 349.57 KB)
PDFNDS8852H Datasheet Cover
NDS8852H Datasheet Page 2 NDS8852H Datasheet Page 3 NDS8852H Datasheet Page 4 NDS8852H Datasheet Page 5 NDS8852H Datasheet Page 6 NDS8852H Datasheet Page 7 NDS8852H Datasheet Page 8 NDS8852H Datasheet Page 9 NDS8852H Datasheet Page 10 NDS8852H Datasheet Page 11

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NDS8852H Specifications

ManufacturerON Semiconductor
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.3A, 3.4A
Rds On (Max) @ Id, Vgs80mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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