Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDS8852H

NDS8852H

For Reference Only

Part Number NDS8852H
PNEDA Part # NDS8852H
Description MOSFET N/P-CH 30V 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDS8852H Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDS8852H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
NDS8852H, NDS8852H Datasheet (Total Pages: 12, Size: 349.57 KB)
PDFNDS8852H Datasheet Cover
NDS8852H Datasheet Page 2 NDS8852H Datasheet Page 3 NDS8852H Datasheet Page 4 NDS8852H Datasheet Page 5 NDS8852H Datasheet Page 6 NDS8852H Datasheet Page 7 NDS8852H Datasheet Page 8 NDS8852H Datasheet Page 9 NDS8852H Datasheet Page 10 NDS8852H Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDS8852H Datasheet
  • where to find NDS8852H
  • ON Semiconductor

  • ON Semiconductor NDS8852H
  • NDS8852H PDF Datasheet
  • NDS8852H Stock

  • NDS8852H Pinout
  • Datasheet NDS8852H
  • NDS8852H Supplier

  • ON Semiconductor Distributor
  • NDS8852H Price
  • NDS8852H Distributor

NDS8852H Specifications

ManufacturerON Semiconductor
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.3A, 3.4A
Rds On (Max) @ Id, Vgs80mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

The Products You May Be Interested In

IRFHM8363TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A

Rds On (Max) @ Id, Vgs

14.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1165pF @ 10V

Power - Max

2.7W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

8-PQFN (3.3x3.3), Power33

UPA1764G-E2-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7A

Rds On (Max) @ Id, Vgs

35mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Supplier Device Package

8-SOP

SI4204DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

19.8A

Rds On (Max) @ Id, Vgs

4.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2110pF @ 10V

Power - Max

3.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

APTMC60TLM14CAG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel (Three Level Inverter)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

219A (Tc)

Rds On (Max) @ Id, Vgs

12mOhm @ 150A, 20V

Vgs(th) (Max) @ Id

2.4V @ 30mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

483nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

8400pF @ 1000V

Power - Max

925W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP6

Supplier Device Package

SP6

NTHD3102CT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A, 3.1A

Rds On (Max) @ Id, Vgs

45mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 10V

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

ChipFET™

Recently Sold

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

ADM232AARN

ADM232AARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

MC7815ACTG

MC7815ACTG

ON Semiconductor

IC REG LINEAR 15V 1A TO220AB

SMD050-2

SMD050-2

Littelfuse

PTC RESET FUSE 60V 500MA 2SMD

93AA66B-I/SN

93AA66B-I/SN

Microchip Technology

IC EEPROM 4K SPI 2MHZ 8SOIC

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

MTFC4GACAJCN-4M IT

MTFC4GACAJCN-4M IT

Micron Technology Inc.

IC FLASH 32G MMC 153VFBGA

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

JANTX1N4148-1

JANTX1N4148-1

Microsemi

DIODE GEN PURP 75V 200MA DO35

MMBD4148

MMBD4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

MT29F128G08CFABAWP:B

MT29F128G08CFABAWP:B

Micron Technology Inc.

IC FLASH 128G PARALLEL 48TSOP