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NE202930-T1-A

NE202930-T1-A

For Reference Only

Part Number NE202930-T1-A
PNEDA Part # NE202930-T1-A
Description RF TRANS NPN 6V 11GHZ SOT323
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE202930-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE202930-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE202930-T1-A, NE202930-T1-A Datasheet (Total Pages: 8, Size: 1,458.34 KB)
PDFNE202930-T1-A Datasheet Cover
NE202930-T1-A Datasheet Page 2 NE202930-T1-A Datasheet Page 3 NE202930-T1-A Datasheet Page 4 NE202930-T1-A Datasheet Page 5 NE202930-T1-A Datasheet Page 6 NE202930-T1-A Datasheet Page 7 NE202930-T1-A Datasheet Page 8

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NE202930-T1-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition11GHz
Noise Figure (dB Typ @ f)1.15dB @ 1GHz
Gain13.5dB
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 5mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.5dB ~ 2.5dB @ 2GHz

Gain

-

Power - Max

125mW

DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 10mA, 3V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

150°C (TJ)

Mounting Type

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Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

1.6GHz

Noise Figure (dB Typ @ f)

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Gain

20dB

Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 2mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SMini3-G1

BFG 193 E6433

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Gain

10.5dB ~ 16dB

Power - Max

600mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 30mA, 8V

Current - Collector (Ic) (Max)

80mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-261-4, TO-261AA

Supplier Device Package

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64054H

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.2dB @ 1GHz

Gain

13.5dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 20mA, 8V

Current - Collector (Ic) (Max)

65mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-253-4, TO-253AA

Supplier Device Package

SOT-143

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