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NE685M03-A

NE685M03-A

For Reference Only

Part Number NE685M03-A
PNEDA Part # NE685M03-A
Description RF TRANS NPN 5V 12GHZ M03
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE685M03-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE685M03-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE685M03-A, NE685M03-A Datasheet (Total Pages: 4, Size: 205.23 KB)
PDFNE685M03-T1-A Datasheet Cover
NE685M03-T1-A Datasheet Page 2 NE685M03-T1-A Datasheet Page 3 NE685M03-T1-A Datasheet Page 4

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NE685M03-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.5dB @ 2GHz
Gain-
Power - Max125mW
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA, 3V
Current - Collector (Ic) (Max)30mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-623F
Supplier Device PackageM03

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.3dB ~ 1.8dB @ 900MHz

Gain

-

Power - Max

400mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 40mA, 8V

Current - Collector (Ic) (Max)

120mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-253-4, TO-253AA

Supplier Device Package

SOT-143B

Manufacturer

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Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6.5GHz

Noise Figure (dB Typ @ f)

1.1dB @ 1GHz

Gain

9dB

Power - Max

1.2W

DC Current Gain (hFE) (Min) @ Ic, Vce

125 @ 20mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

SOT-89

Manufacturer

CEL

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

12GHz

Noise Figure (dB Typ @ f)

1.5dB @ 2GHz

Gain

11dB

Power - Max

180mW

DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 10mA, 3V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-253-4, TO-253AA

Supplier Device Package

SOT-143

75096A

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

-

Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

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Operating Temperature

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Mounting Type

-

Package / Case

-

Supplier Device Package

-

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

2dB ~ 3dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

65 @ 15mA, 10V

Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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