NESG2030M04-T2-A
For Reference Only
| Part Number | NESG2030M04-T2-A |
| PNEDA Part # | NESG2030M04-T2-A |
| Description | RF TRANS NPN 2.3V 60GHZ M04 |
| Manufacturer | CEL |
| Unit Price | Request a Quote |
| In Stock | 3,132 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NESG2030M04-T2-A Resources
| Brand | CEL |
| ECAD Module |
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| Mfr. Part Number | NESG2030M04-T2-A |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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NESG2030M04-T2-A Specifications
| Manufacturer | CEL |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.3V |
| Frequency - Transition | 60GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.1dB @ 2GHz |
| Gain | 16dB |
| Power - Max | 80mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA, 2V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-343F |
| Supplier Device Package | M04 |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 16V Frequency - Transition 870MHz Noise Figure (dB Typ @ f) - Gain 9.5dB Power - Max 2W DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V Current - Collector (Ic) (Max) 150mA Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 200MHz Noise Figure (dB Typ @ f) 4.5dB @ 200MHz Gain 20dB Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature - Mounting Type Through Hole Package / Case TO-206AF, TO-72-4 Metal Can Supplier Device Package TO-72 |
