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NGD8201NT4G

NGD8201NT4G

For Reference Only

Part Number NGD8201NT4G
PNEDA Part # NGD8201NT4G
Description IGBT 440V 20A 125W DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGD8201NT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGD8201NT4G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGD8201NT4G, NGD8201NT4G Datasheet (Total Pages: 8, Size: 121.94 KB)
PDFNGD8201NT4G Datasheet Cover
NGD8201NT4G Datasheet Page 2 NGD8201NT4G Datasheet Page 3 NGD8201NT4G Datasheet Page 4 NGD8201NT4G Datasheet Page 5 NGD8201NT4G Datasheet Page 6 NGD8201NT4G Datasheet Page 7 NGD8201NT4G Datasheet Page 8

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NGD8201NT4G Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)440V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)50A
Vce(on) (Max) @ Vge, Ic1.9V @ 4.5V, 20A
Power - Max125W
Switching Energy-
Input TypeLogic
Gate Charge-
Td (on/off) @ 25°C-/5µs
Test Condition300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.7mJ (on), 1mJ (off)

Input Type

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Gate Charge

370nC

Td (on/off) @ 25°C

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Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

16A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

68W

Switching Energy

40µJ (on), 136µJ (off)

Input Type

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Gate Charge

15.2nC

Td (on/off) @ 25°C

12ns/86ns

Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

133ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

30W

Switching Energy

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Input Type

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Gate Charge

40.3nC

Td (on/off) @ 25°C

11.2ns/40.8ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Power - Max

500W

Switching Energy

1mJ (off)

Input Type

Standard

Gate Charge

170nC

Td (on/off) @ 25°C

28ns/160ns

Test Condition

400V, 50A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

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