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NGTB15N120IHLWG

NGTB15N120IHLWG

For Reference Only

Part Number NGTB15N120IHLWG
PNEDA Part # NGTB15N120IHLWG
Description IGBT 1200V 30A 156W TO247-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB15N120IHLWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB15N120IHLWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB15N120IHLWG, NGTB15N120IHLWG Datasheet (Total Pages: 9, Size: 167.65 KB)
PDFNGTB15N120IHLWG Datasheet Cover
NGTB15N120IHLWG Datasheet Page 2 NGTB15N120IHLWG Datasheet Page 3 NGTB15N120IHLWG Datasheet Page 4 NGTB15N120IHLWG Datasheet Page 5 NGTB15N120IHLWG Datasheet Page 6 NGTB15N120IHLWG Datasheet Page 7 NGTB15N120IHLWG Datasheet Page 8 NGTB15N120IHLWG Datasheet Page 9

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NGTB15N120IHLWG Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Power - Max156W
Switching Energy560µJ (off)
Input TypeStandard
Gate Charge160nC
Td (on/off) @ 25°C-/165ns
Test Condition600V, 15A, 15Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

12ns/83ns

Test Condition

400V, 5A, 60Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

56A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

190W

Switching Energy

400µJ (on), 300µJ (off)

Input Type

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64nC

Td (on/off) @ 25°C

21ns/143ns

Test Condition

360V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

FGA15S125P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1250V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.72V @ 15V, 15A

Power - Max

136W

Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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