NGTB25N120SWG
For Reference Only
| Part Number | NGTB25N120SWG |
| PNEDA Part # | NGTB25N120SWG |
| Description | IGBT 25A 1200V TO-247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,352 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTB25N120SWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTB25N120SWG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTB25N120SWG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 100A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
| Power - Max | 385W |
| Switching Energy | 1.95mJ (on), 600µJ (off) |
| Input Type | Standard |
| Gate Charge | 178nC |
| Td (on/off) @ 25°C | 87ns/179ns |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 154ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 330V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 70A Power - Max 160W Switching Energy - Input Type Standard Gate Charge 86nC Td (on/off) @ 25°C 39ns/120ns Test Condition 196V, 25A, 10Ohm Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
