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NGTB30N60IHLWG

NGTB30N60IHLWG

For Reference Only

Part Number NGTB30N60IHLWG
PNEDA Part # NGTB30N60IHLWG
Description IGBT 600V 30A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB30N60IHLWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB30N60IHLWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB30N60IHLWG, NGTB30N60IHLWG Datasheet (Total Pages: 10, Size: 134.01 KB)
PDFNGTB30N60IHLWG Datasheet Cover
NGTB30N60IHLWG Datasheet Page 2 NGTB30N60IHLWG Datasheet Page 3 NGTB30N60IHLWG Datasheet Page 4 NGTB30N60IHLWG Datasheet Page 5 NGTB30N60IHLWG Datasheet Page 6 NGTB30N60IHLWG Datasheet Page 7 NGTB30N60IHLWG Datasheet Page 8 NGTB30N60IHLWG Datasheet Page 9 NGTB30N60IHLWG Datasheet Page 10

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NGTB30N60IHLWG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
Power - Max250W
Switching Energy280µJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C70ns/140ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)400ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.43mJ (on), 3.83mJ (off)

Input Type

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Gate Charge

129nC

Td (on/off) @ 25°C

35ns/148ns

Test Condition

600V, 40A, 15Ohm, 15V

Reverse Recovery Time (trr)

355ns

Operating Temperature

-55°C ~ 175°C (TJ)

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Supplier Device Package

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