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NGTB75N60FL2WG

NGTB75N60FL2WG

For Reference Only

Part Number NGTB75N60FL2WG
PNEDA Part # NGTB75N60FL2WG
Description IGBT 600V 75A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB75N60FL2WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB75N60FL2WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB75N60FL2WG, NGTB75N60FL2WG Datasheet (Total Pages: 11, Size: 239.3 KB)
PDFNGTB75N60FL2WG Datasheet Cover
NGTB75N60FL2WG Datasheet Page 2 NGTB75N60FL2WG Datasheet Page 3 NGTB75N60FL2WG Datasheet Page 4 NGTB75N60FL2WG Datasheet Page 5 NGTB75N60FL2WG Datasheet Page 6 NGTB75N60FL2WG Datasheet Page 7 NGTB75N60FL2WG Datasheet Page 8 NGTB75N60FL2WG Datasheet Page 9 NGTB75N60FL2WG Datasheet Page 10 NGTB75N60FL2WG Datasheet Page 11

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NGTB75N60FL2WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Power - Max595W
Switching Energy1.5mJ (on), 1mJ (off)
Input TypeStandard
Gate Charge310nC
Td (on/off) @ 25°C110ns/270ns
Test Condition400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)80ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Operating Temperature

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Supplier Device Package

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Manufacturer

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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130nC

Td (on/off) @ 25°C

100ns/500ns

Test Condition

800V, 25A, 33Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Power - Max

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Switching Energy

160µJ (on), 160µJ (off)

Input Type

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Gate Charge

29nC

Td (on/off) @ 25°C

23ns/140ns

Test Condition

400V, 8A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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