NGTB75N65FL2WG
For Reference Only
| Part Number | NGTB75N65FL2WG |
| PNEDA Part # | NGTB75N65FL2WG |
| Description | IGBT 600V 75A TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,108 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTB75N65FL2WG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTB75N65FL2WG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTB75N65FL2WG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Power - Max | 595W |
| Switching Energy | 1.5mJ (on), 1mJ (off) |
| Input Type | Standard |
| Gate Charge | 310nC |
| Td (on/off) @ 25°C | 110ns/270ns |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 80ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 440V Current - Collector (Ic) (Max) 15A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 2.2V @ 4V, 10A Power - Max 107W Switching Energy - Input Type Logic Gate Charge - Td (on/off) @ 25°C -/4µs Test Condition 300V, 6.5A, 1kOhm Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 120A Current - Collector Pulsed (Icm) 240A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 80A Power - Max 79W Switching Energy 1.8mJ (on), 1mJ (off) Input Type Standard Gate Charge 448nC Td (on/off) @ 25°C 60ns/220ns Test Condition 400V, 80A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3 Full Pack Supplier Device Package TO-3PF |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 440V Current - Collector (Ic) (Max) 15A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 25A Power - Max 150W Switching Energy - Input Type Logic Gate Charge - Td (on/off) @ 25°C -/4µs Test Condition 300V, 6.5A, 1kOhm Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Rohm Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 16A Current - Collector Pulsed (Icm) 24A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A Power - Max 94W Switching Energy - Input Type Standard Gate Charge 21nC Td (on/off) @ 25°C 13ns/33ns Test Condition 400V, 8A, 10Ohm, 15V Reverse Recovery Time (trr) 42ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package LPDS (TO-263S) |
