NGTD28T65F2WP
For Reference Only
| Part Number | NGTD28T65F2WP |
| PNEDA Part # | NGTD28T65F2WP |
| Description | IGBT TRENCH FIELD STOP 650V DIE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,696 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 23 - May 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTD28T65F2WP Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTD28T65F2WP |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTD28T65F2WP Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Manufacturer Rohm Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 28A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A Power - Max 61W Switching Energy - Input Type Standard Gate Charge 58nC Td (on/off) @ 25°C 27ns/105ns Test Condition 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) 58ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-3PFM, SC-93-3 Supplier Device Package TO-3PFM |
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