Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NGTD30T120F2WP

NGTD30T120F2WP

For Reference Only

Part Number NGTD30T120F2WP
PNEDA Part # NGTD30T120F2WP
Description IGBT TRENCH FIELD STOP 1200V DIE
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTD30T120F2WP Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTD30T120F2WP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTD30T120F2WP, NGTD30T120F2WP Datasheet (Total Pages: 3, Size: 348.22 KB)
PDFNGTD30T120F2SWK Datasheet Cover
NGTD30T120F2SWK Datasheet Page 2 NGTD30T120F2SWK Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NGTD30T120F2WP Datasheet
  • where to find NGTD30T120F2WP
  • ON Semiconductor

  • ON Semiconductor NGTD30T120F2WP
  • NGTD30T120F2WP PDF Datasheet
  • NGTD30T120F2WP Stock

  • NGTD30T120F2WP Pinout
  • Datasheet NGTD30T120F2WP
  • NGTD30T120F2WP Supplier

  • ON Semiconductor Distributor
  • NGTD30T120F2WP Price
  • NGTD30T120F2WP Distributor

NGTD30T120F2WP Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

The Products You May Be Interested In

IRG4PC30UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

100W

Switching Energy

160µJ (on), 200µJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

17ns/78ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IKFW75N60ETXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Power - Max

178W

Switching Energy

2.7mJ (on), 2.35J (off)

Input Type

Standard

Gate Charge

440nC

Td (on/off) @ 25°C

33ns/340ns

Test Condition

400V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr)

107ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3-AI

SGB20N60ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 20A

Power - Max

179W

Switching Energy

440µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

36ns/225ns

Test Condition

400V, 20A, 16Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3

SGF40N60UFTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 20A

Power - Max

100W

Switching Energy

160µJ (on), 200µJ (off)

Input Type

Standard

Gate Charge

97nC

Td (on/off) @ 25°C

15ns/65ns

Test Condition

300V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

TO-3PF

STGF14NC60KD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

28W

Switching Energy

82µJ (on), 155µJ (off)

Input Type

Standard

Gate Charge

34.4nC

Td (on/off) @ 25°C

22.5ns/116ns

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FP

Recently Sold

ISL4221EIRZ-T

ISL4221EIRZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 1/1 16QFN

TLJT107M010R0900

TLJT107M010R0900

CAP TANT 100UF 20% 10V 1411

SMCJ36A-E3/57T

SMCJ36A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 36V 58.1V DO214AB

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

IHLP1212BZER1R5M11

IHLP1212BZER1R5M11

Vishay Dale

FIXED IND 1.5UH 3.8A 32 MOHM SMD

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

TL072ID

TL072ID

STMicroelectronics

IC OPAMP JFET 2 CIRCUIT 8SO

3224W-1-101E

3224W-1-101E

Bourns

TRIMMER 100 OHM 0.25W J LEAD TOP

CM453232-1R5KL

CM453232-1R5KL

Bourns

FIXED IND 1.5UH 410MA 600 MOHM

RB751S40

RB751S40

ON Semiconductor

DIODE SCHOTTKY 40V 30MA SOD523F

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

BAT54C

BAT54C

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3