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NGTG15N60S1EG

NGTG15N60S1EG

For Reference Only

Part Number NGTG15N60S1EG
PNEDA Part # NGTG15N60S1EG
Description IGBT 600V 30A 117W TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,746
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTG15N60S1EG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTG15N60S1EG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTG15N60S1EG, NGTG15N60S1EG Datasheet (Total Pages: 9, Size: 124.35 KB)
PDFNGTG15N60S1EG Datasheet Cover
NGTG15N60S1EG Datasheet Page 2 NGTG15N60S1EG Datasheet Page 3 NGTG15N60S1EG Datasheet Page 4 NGTG15N60S1EG Datasheet Page 5 NGTG15N60S1EG Datasheet Page 6 NGTG15N60S1EG Datasheet Page 7 NGTG15N60S1EG Datasheet Page 8 NGTG15N60S1EG Datasheet Page 9

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NGTG15N60S1EG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 15A
Power - Max117W
Switching Energy550µJ (on), 350µJ (off)
Input TypeStandard
Gate Charge88nC
Td (on/off) @ 25°C65ns/170ns
Test Condition400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

220A

Current - Collector Pulsed (Icm)

450A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

400V, 150A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

19ns/160ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

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-40°C ~ 175°C (TJ)

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Package / Case

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

417W

Switching Energy

1.5mJ (on), 460µJ (off)

Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

100ns/237ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

94ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

FGB30N6S2DT

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

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Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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