Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NGTG15N60S1EG

NGTG15N60S1EG

For Reference Only

Part Number NGTG15N60S1EG
PNEDA Part # NGTG15N60S1EG
Description IGBT 600V 30A 117W TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,746
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTG15N60S1EG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTG15N60S1EG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTG15N60S1EG, NGTG15N60S1EG Datasheet (Total Pages: 9, Size: 124.35 KB)
PDFNGTG15N60S1EG Datasheet Cover
NGTG15N60S1EG Datasheet Page 2 NGTG15N60S1EG Datasheet Page 3 NGTG15N60S1EG Datasheet Page 4 NGTG15N60S1EG Datasheet Page 5 NGTG15N60S1EG Datasheet Page 6 NGTG15N60S1EG Datasheet Page 7 NGTG15N60S1EG Datasheet Page 8 NGTG15N60S1EG Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NGTG15N60S1EG Datasheet
  • where to find NGTG15N60S1EG
  • ON Semiconductor

  • ON Semiconductor NGTG15N60S1EG
  • NGTG15N60S1EG PDF Datasheet
  • NGTG15N60S1EG Stock

  • NGTG15N60S1EG Pinout
  • Datasheet NGTG15N60S1EG
  • NGTG15N60S1EG Supplier

  • ON Semiconductor Distributor
  • NGTG15N60S1EG Price
  • NGTG15N60S1EG Distributor

NGTG15N60S1EG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 15A
Power - Max117W
Switching Energy550µJ (on), 350µJ (off)
Input TypeStandard
Gate Charge88nC
Td (on/off) @ 25°C65ns/170ns
Test Condition400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

64A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 32A

Power - Max

300W

Switching Energy

2.2mJ (off)

Input Type

Standard

Gate Charge

89nC

Td (on/off) @ 25°C

20ns/260ns

Test Condition

720V, 32A, 5Ohm, 15V

Reverse Recovery Time (trr)

190ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IKW40N65F5FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

74A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

255W

Switching Energy

360µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

95nC

Td (on/off) @ 25°C

19ns/160ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

IGP30N65F5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 30A

Power - Max

188W

Switching Energy

280µJ (on), 70µJ (off)

Input Type

Standard

Gate Charge

65nC

Td (on/off) @ 25°C

19ns/170ns

Test Condition

400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

STGP10NB60S

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

29A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 10A

Power - Max

80W

Switching Energy

600µJ (on), 5mJ (off)

Input Type

Standard

Gate Charge

33nC

Td (on/off) @ 25°C

700ns/1.2µs

Test Condition

480V, 10A, 1kOhm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

FGB30N6S2DT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Recently Sold

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

BAT54CWT1G

BAT54CWT1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT323

PC817XNNIP0F

PC817XNNIP0F

SHARP/Socle Technology

OPTOISOLATOR 5KV TRANS 4SMD

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

MPQ7053

MPQ7053

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227

MCP2515T-I/SO

MCP2515T-I/SO

Microchip Technology

IC CAN CONTROLLER W/SPI 18SOIC

FDS6570A

FDS6570A

ON Semiconductor

MOSFET N-CH 20V 15A 8SOIC

TS922IDT

TS922IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603