NGTG35N65FL2WG
For Reference Only
| Part Number | NGTG35N65FL2WG |
| PNEDA Part # | NGTG35N65FL2WG |
| Description | IGBT 650V 60A 167W TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,426 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTG35N65FL2WG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTG35N65FL2WG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTG35N65FL2WG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 70A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Power - Max | 300W |
| Switching Energy | 840µJ (on), 280µJ (off) |
| Input Type | Standard |
| Gate Charge | 125nC |
| Td (on/off) @ 25°C | 72ns/132ns |
| Test Condition | 400V, 35A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 28A Current - Collector Pulsed (Icm) 58A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A Power - Max 100W Switching Energy 360µJ (on), 510µJ (off) Input Type Standard Gate Charge 67nC Td (on/off) @ 25°C 26ns/130ns Test Condition 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
