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NJVMJD3055T4G

NJVMJD3055T4G

For Reference Only

Part Number NJVMJD3055T4G
PNEDA Part # NJVMJD3055T4G
Description TRANS NPN 60V 10A DPAK-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJVMJD3055T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJVMJD3055T4G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
NJVMJD3055T4G, NJVMJD3055T4G Datasheet (Total Pages: 7, Size: 132.58 KB)
PDFMJD3055G Datasheet Cover
MJD3055G Datasheet Page 2 MJD3055G Datasheet Page 3 MJD3055G Datasheet Page 4 MJD3055G Datasheet Page 5 MJD3055G Datasheet Page 6 MJD3055G Datasheet Page 7

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NJVMJD3055T4G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Power - Max1.75W
Frequency - Transition2MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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