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NJVMJD32CT4G

NJVMJD32CT4G

For Reference Only

Part Number NJVMJD32CT4G
PNEDA Part # NJVMJD32CT4G
Description TRANS PNP 100V 3A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 592
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJVMJD32CT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJVMJD32CT4G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
NJVMJD32CT4G, NJVMJD32CT4G Datasheet (Total Pages: 12, Size: 239 KB)
PDFMJD32CRL Datasheet Cover
MJD32CRL Datasheet Page 2 MJD32CRL Datasheet Page 3 MJD32CRL Datasheet Page 4 MJD32CRL Datasheet Page 5 MJD32CRL Datasheet Page 6 MJD32CRL Datasheet Page 7 MJD32CRL Datasheet Page 8 MJD32CRL Datasheet Page 9 MJD32CRL Datasheet Page 10 MJD32CRL Datasheet Page 11

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NJVMJD32CT4G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor TypePNP
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 4V
Power - Max1.56W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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