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NP100P04PDG-E1-AY

NP100P04PDG-E1-AY

For Reference Only

Part Number NP100P04PDG-E1-AY
PNEDA Part # NP100P04PDG-E1-AY
Description MOSFET P-CH 40V 100A TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP100P04PDG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP100P04PDG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP100P04PDG-E1-AY, NP100P04PDG-E1-AY Datasheet (Total Pages: 9, Size: 293.47 KB)
PDFNP100P04PDG-E1-AY Datasheet Cover
NP100P04PDG-E1-AY Datasheet Page 2 NP100P04PDG-E1-AY Datasheet Page 3 NP100P04PDG-E1-AY Datasheet Page 4 NP100P04PDG-E1-AY Datasheet Page 5 NP100P04PDG-E1-AY Datasheet Page 6 NP100P04PDG-E1-AY Datasheet Page 7 NP100P04PDG-E1-AY Datasheet Page 8 NP100P04PDG-E1-AY Datasheet Page 9

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NP100P04PDG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs320nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15100pF @ 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 200W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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