Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NP22N055SLE(1)-E1-AY

NP22N055SLE(1)-E1-AY

For Reference Only

Part Number NP22N055SLE(1)-E1-AY
PNEDA Part # NP22N055SLE-1-E1-AY
Description TRANSISTOR
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP22N055SLE(1)-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP22N055SLE(1)-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NP22N055SLE(1)-E1-AY Datasheet
  • where to find NP22N055SLE(1)-E1-AY
  • Renesas Electronics America

  • Renesas Electronics America NP22N055SLE(1)-E1-AY
  • NP22N055SLE(1)-E1-AY PDF Datasheet
  • NP22N055SLE(1)-E1-AY Stock

  • NP22N055SLE(1)-E1-AY Pinout
  • Datasheet NP22N055SLE(1)-E1-AY
  • NP22N055SLE(1)-E1-AY Supplier

  • Renesas Electronics America Distributor
  • NP22N055SLE(1)-E1-AY Price
  • NP22N055SLE(1)-E1-AY Distributor

NP22N055SLE(1)-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IPW50R190CEFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

18.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

190mOhm @ 6.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 510µA

Gate Charge (Qg) (Max) @ Vgs

47.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1137pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

127W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

150mOhm @ 5A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IRFS3806PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 50V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

2SJ601(0)-Z-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

STW14NM65N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Recently Sold

WSL251200000ZEA9

WSL251200000ZEA9

Vishay Dale

RES 0 OHM JUMPER 2512

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

S6010RTP

S6010RTP

Littelfuse

SCR SENS 600V 10A TO220

EMS22A50-D28-LT6

EMS22A50-D28-LT6

Bourns

ROTARY ENCODER MAGNETIC 1024PPR

STM32L476VGT6

STM32L476VGT6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 100LQFP

0467.750NR

0467.750NR

Littelfuse

FUSE BOARD MOUNT 750MA 32VAC/VDC

MAX5525ETC+T

MAX5525ETC+T

Maxim Integrated

IC DAC 10BIT V-OUT 12TQFN

MIC5332-SSYMT-TR

MIC5332-SSYMT-TR

Microchip Technology

IC REG LINEAR 3.3V/3.3V 8TMLF

DLP11SN900HL2L

DLP11SN900HL2L

Murata

CMC 150MA 2LN 90 OHM SMD

DS2781E+T&R

DS2781E+T&R

Maxim Integrated

IC FUEL GAUGE BATT 8TSSOP

ISL3330IAZ

ISL3330IAZ

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 2/2 20SSOP

RCLAMP0854P.TCT

RCLAMP0854P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6