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NP33N06YDG-E1-AY

NP33N06YDG-E1-AY

For Reference Only

Part Number NP33N06YDG-E1-AY
PNEDA Part # NP33N06YDG-E1-AY
Description MOSFET N-CH 60V 33A 8HSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,672
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP33N06YDG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP33N06YDG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP33N06YDG-E1-AY, NP33N06YDG-E1-AY Datasheet (Total Pages: 8, Size: 223.42 KB)
PDFNP33N06YDG-E1-AY Datasheet Cover
NP33N06YDG-E1-AY Datasheet Page 2 NP33N06YDG-E1-AY Datasheet Page 3 NP33N06YDG-E1-AY Datasheet Page 4 NP33N06YDG-E1-AY Datasheet Page 5 NP33N06YDG-E1-AY Datasheet Page 6 NP33N06YDG-E1-AY Datasheet Page 7 NP33N06YDG-E1-AY Datasheet Page 8

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NP33N06YDG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta), 97W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package / Case8-SMD, Flat Lead Exposed Pad

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