Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NP33N06YDG-E1-AY

NP33N06YDG-E1-AY

For Reference Only

Part Number NP33N06YDG-E1-AY
PNEDA Part # NP33N06YDG-E1-AY
Description MOSFET N-CH 60V 33A 8HSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,672
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP33N06YDG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP33N06YDG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP33N06YDG-E1-AY, NP33N06YDG-E1-AY Datasheet (Total Pages: 8, Size: 223.42 KB)
PDFNP33N06YDG-E1-AY Datasheet Cover
NP33N06YDG-E1-AY Datasheet Page 2 NP33N06YDG-E1-AY Datasheet Page 3 NP33N06YDG-E1-AY Datasheet Page 4 NP33N06YDG-E1-AY Datasheet Page 5 NP33N06YDG-E1-AY Datasheet Page 6 NP33N06YDG-E1-AY Datasheet Page 7 NP33N06YDG-E1-AY Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NP33N06YDG-E1-AY Datasheet
  • where to find NP33N06YDG-E1-AY
  • Renesas Electronics America

  • Renesas Electronics America NP33N06YDG-E1-AY
  • NP33N06YDG-E1-AY PDF Datasheet
  • NP33N06YDG-E1-AY Stock

  • NP33N06YDG-E1-AY Pinout
  • Datasheet NP33N06YDG-E1-AY
  • NP33N06YDG-E1-AY Supplier

  • Renesas Electronics America Distributor
  • NP33N06YDG-E1-AY Price
  • NP33N06YDG-E1-AY Distributor

NP33N06YDG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta), 97W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package / Case8-SMD, Flat Lead Exposed Pad

The Products You May Be Interested In

STW13N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 100V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IRF6674TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

13.4A (Ta), 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 13.4A, 10V

Vgs(th) (Max) @ Id

4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MZ

Package / Case

DirectFET™ Isometric MZ

NTR4171PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.6nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 15V

FET Feature

-

Power Dissipation (Max)

480mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

STP33N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1781pF @ 100V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

DMT6012LFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

785pF @ 30V

FET Feature

-

Power Dissipation (Max)

900mW (Ta), 11W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6

Package / Case

6-UDFN Exposed Pad

Recently Sold

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

MP3V5004GP

MP3V5004GP

NXP

IC PRESSURE SENSOR 8-SOP

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227

P170SP1-FC15AR10K

P170SP1-FC15AR10K

TT Electronics/BI

POT 10K OHM 1/20W PLASTIC LOG

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

FMR0H104ZF

FMR0H104ZF

KEMET

CAPACITOR 0.1F 5.5V RADIAL

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

74HC245D

74HC245D

Toshiba Semiconductor and Storage

IC TRANSCVR NON-INVERT 6V 20SOIC

MCP4921T-E/SN

MCP4921T-E/SN

Microchip Technology

IC DAC 12BIT V-OUT 8SOIC