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NP75P03YDG-E1-AY

NP75P03YDG-E1-AY

For Reference Only

Part Number NP75P03YDG-E1-AY
PNEDA Part # NP75P03YDG-E1-AY
Description MOSFET P-CH 30V 75A 8HSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP75P03YDG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP75P03YDG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP75P03YDG-E1-AY, NP75P03YDG-E1-AY Datasheet (Total Pages: 8, Size: 226.51 KB)
PDFNP75P03YDG-E1-AY Datasheet Cover
NP75P03YDG-E1-AY Datasheet Page 2 NP75P03YDG-E1-AY Datasheet Page 3 NP75P03YDG-E1-AY Datasheet Page 4 NP75P03YDG-E1-AY Datasheet Page 5 NP75P03YDG-E1-AY Datasheet Page 6 NP75P03YDG-E1-AY Datasheet Page 7 NP75P03YDG-E1-AY Datasheet Page 8

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NP75P03YDG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs6.2mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs141nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta), 138W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package / Case8-SMD, Flat Lead Exposed Pad

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