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NP82N03PUG-E1-AY

NP82N03PUG-E1-AY

For Reference Only

Part Number NP82N03PUG-E1-AY
PNEDA Part # NP82N03PUG-E1-AY
Description MOSFET N-CH 30V 82A TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP82N03PUG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP82N03PUG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP82N03PUG-E1-AY, NP82N03PUG-E1-AY Datasheet (Total Pages: 9, Size: 274.63 KB)
PDFNP82N03PUG-E1-AY Datasheet Cover
NP82N03PUG-E1-AY Datasheet Page 2 NP82N03PUG-E1-AY Datasheet Page 3 NP82N03PUG-E1-AY Datasheet Page 4 NP82N03PUG-E1-AY Datasheet Page 5 NP82N03PUG-E1-AY Datasheet Page 6 NP82N03PUG-E1-AY Datasheet Page 7 NP82N03PUG-E1-AY Datasheet Page 8 NP82N03PUG-E1-AY Datasheet Page 9

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NP82N03PUG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 41A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9080pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 143W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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